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FDS4685 +BOM

40V P-Channel PowerTrench® MOSFET -8.2A, 27mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDS4685
Datasheet:

FDS4685 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDS4685

FDS4685 General Description

The FDS4685 is a high-performance P-Channel MOSFET designed for power management applications that demand a wide range of gate drive voltage ratings. Built using the advanced PowerTrench process, this rugged gate version offers exceptional durability and reliability, making it ideal for a variety of power management tasks. With a gate drive voltage range of 4.5V to 20V, the FDS4685 provides versatility and flexibility, enabling it to be used in a wide range of systems and configurations. Whether it's for industrial, automotive, or consumer electronics applications, this MOSFET is well-equipped to handle the demands of power management with ease and efficiency

Key Features

-3.9A, -15V
R_DS(ON) = 0.025 mΩ @ V_GS = -4.5V
Fast switching time
Low R_DS(ON)
Suitable for high-power applications
Fully CE compliant

Application

Versatile functionality
Advanced technology
High level of protection

Specifications

Source Content uid	FDS4685	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	56 Weeks
Application	SWITCHING	Configuration	SINGLE WITH BUILT-IN DIODE
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G8
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Element Material	SILICON