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See Technical Specifications

FDS6375 +BOM

P-Channel 2.5V Specified PowerTrench® MOSFFET -20V, -8A, 24mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDS6375
Datasheet:

FDS6375 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDS6375

FDS6375 General Description

The FDS6375 is a high-quality P-Channel MOSFET designed for power management applications. This rugged gate version is built using advanced PowerTrench technology, ensuring reliable performance in demanding environments. With a specified 2.5V gate drive voltage, this MOSFET is optimized for efficiency and power savings. Its wide range of gate drive voltage (2.5V – 8V) makes it versatile for various applications, providing flexibility for different power management needs

Key Features

Fast response time guaranteed
Low input capacitance ensured
High-reliability device
Wide operating temperature range

Application

Flexible Power Distribution
Reliable Circuit Switching
Efficient Battery Management

Specifications

Source Content uid	FDS6375	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Application	SWITCHING	Configuration	SINGLE WITH BUILT-IN DIODE
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G8
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Element Material	SILICON