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FDS6574A +BOM

Unipolar N-MOSFET transistor capable of operating at 20V, with a 16A current rating, and 2.5W power dissipation in SO8 configuration

Manufacturer:

onsemi
Mfr.Part #:

FDS6574A
Datasheet:

FDS6574A Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDS6574A

FDS6574A General Description

Efficiency is key when it comes to DC/DC converters, and the FDS6574A N-Channel MOSFET is here to deliver just that. With its optimized design for low gate charge, low R_DS(ON), and fast switching speed, this MOSFET is a top choice for improving overall performance

Key Features

Metal-oxide-semiconductor (MOS) technology
Trench-based design for increased performance
Advanced packaging for improved thermal management

Application

Best for various uses
Great for all applications
Perfect for any project

Specifications

Source Content uid	FDS6574A	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	20 V
Drain Current-Max (ID)	16 A	Drain-source On Resistance-Max	0.006 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	1 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON