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FDS6680AS +BOM

N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FDS6680AS
Datasheet:

FDS6680AS Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDS6680AS

FDS6680AS General Description

One of the unique aspects of the FDS6680AS is its integrated Schottky diode, which is made possible through ON Semiconductor's innovative SyncFET technology. This integrated diode helps to simplify the design of synchronous rectifiers, making it easier to achieve high levels of efficiency. In fact, the performance of the FDS6680AS as a low-side switch is comparable to using the FDS6680 in parallel with a separate Schottky diode

Key Features

High-speed switching capability
Compact design for space-saving
Low input capacitance (1pF typical)

Excellent thermal performance
Rugged package for vibration resistance
High reliability for long-life operation

Application

Express yourself
Wow factor!
Super duper fun

Specifications

Source Content uid	FDS6680AS	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	compliant
ECCN Code	EAR99	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	11.5 A
Drain-source On Resistance-Max	0.01 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	2.5 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON