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FDS6681Z +BOM

20A Drain Current

FDS6681Z General Description

The FDS6681Z is a versatile P-channel MOSFET that combines innovative design with superior performance. Utilizing the PowerTrench® process, this device achieves minimal on-state resistance, making it the perfect solution for power management and load switching applications commonly found in notebook computers and portable battery packs. With its tailored features and efficient design, the FDS6681Z is a reliable choice for engineers looking to optimize power efficiency and performance in their electronic projects

Key Features

  • Compact size for space-saving designs
  • Low noise level during operation
  • Suitable for high-reliability applications
  • Fully compliant with military standards
  • High-performance and precision guaranteed
  • Precise timing and synchronization ensured

Application

  • The best choice available.
  • Suitable for any situation.
  • Reliable and efficient product.

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 20 A Rds On - Drain-Source Resistance 3.8 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 260 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Tradename PowerTrench
Series FDS6681Z Configuration Single
Fall Time 380 ns Forward Transconductance - Min 79 S
Height 1.75 mm Length 4.9 mm
Product Type MOSFET Rise Time 9 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 P-Channel Type MOSFET
Typical Turn-Off Delay Time 660 ns Typical Turn-On Delay Time 20 ns
Width 3.9 mm Unit Weight 0.008113 oz

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