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FDS8858CZ +BOM

Dual N & P-Channel PowerTrench® MOSFET 30V

Manufacturer:

onsemi
Mfr.Part #:

FDS8858CZ
Datasheet:

FDS8858CZ Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDS8858CZ

FDS8858CZ General Description

With its impressive specifications, the FDS8858CZ stands out as a top-tier dual N-channel PowerTrench MOSFET designed for high-efficiency and low power consumption applications. Boasting a low on-resistance of 16mΩ and a maximum drain current of 35A, it is perfectly suited for power management circuits, DC-DC converters, motor control, and other high-power applications. Its voltage range of -20V to 30V and fast switching speed make it a versatile solution for a wide range of power management needs. The MOSFET's high pulse current capability ensures exceptional power delivery efficiency with minimal power losses. Housed in a compact and thermally efficient PowerTrench package, it delivers enhanced heat dissipation and increased overall reliability. Its low-profile package design makes it an ideal choice for space-constrained applications

Key Features

This device features a high level of integration and advanced power management capabilities
It is designed for applications that require low power consumption, high reliability, and small footprint
With its advanced technology and compact design, this part offers excellent performance and efficiency in various systems
The FDS88CZ is a 30V N-channel PowerTrench MOSFET with low on-resistance, making it ideal for power management applications
This device provides a high level of noise immunity and resistance to electrostatic discharge (ESD)
It offers enhanced performance, reliability, and compact size in various electronic systems and applications

Application

Reliable in various applications
Ensures energy efficiency
Delivers consistent performance

Specifications

Source Content uid	FDS8858CZ	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	58 Weeks
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	8.6 A	Drain-source On Resistance-Max	0.017 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs)	2 W	Pulsed Drain Current-Max (IDM)	20 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON