This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FDT3612 +BOM

100V N-Channel PowerTrench® MOSFET 3.7A, 120mΩ

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FDT3612
Datasheet:

FDT3612 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDT3612

FDT3612 General Description

Elevate your power supply designs with FDT3612, a versatile N-Channel MOSFET engineered to deliver superior efficiency and performance. With faster switching speeds and lower gate charge, this MOSFET enables easier and safer drive operation, even at high frequencies. By enhancing the efficiency of DC/DC converters, FDT3612 ensures optimal power delivery and thermal performance in various applications. Upgrade your power electronics systems with FDT3612 and experience the benefits of a reliable and efficient MOSFET solution

Key Features

3.7 A, 100 V
R_DS(on) = 120 mΩ@ V_GS = 10 V
R_DS(on) = 130 mΩ @ V_GS = 6 V
Fast switching speed
Low gate charge (14nC typical)
High performance trench technology for extremely low R_DS(ON)
High power and current handling capability in awidely used surface mount package

Application

This product is general usage and suitable for many different applications.
DC/DC Converters
Motor Drives

Specifications

Source Content uid	FDT3612	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	70 Weeks
Avalanche Energy Rating (Eas)	90 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	3.7 A	Drain-source On Resistance-Max	0.12 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G4
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	4
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	1.1 W	Pulsed Drain Current-Max (IDM)	20 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON