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See Technical Specifications

FDT86113LZ +BOM

FDT86113LZ is a MOSFET Transistor that operates as an N-channel device, with a maximum current handling capability of 3

Manufacturer:

onsemi
Mfr.Part #:

FDT86113LZ
Datasheet:

FDT86113LZ Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDT86113LZ

FDT86113LZ General Description

The FDT86113LZ is the ultimate choice for N-Channel logic Level MOSFETs, thanks to its advanced Power Trench^® process. This special manufacturing technique minimizes on-state resistance while maintaining superior switching performance, making it a reliable and high-performing option for a wide range of applications. In addition, the G-S zener included in this product enhances the ESD voltage level, ensuring maximum safety and protection

Key Features

Wide operating temperature range
Excellent thermal shock resistance
Long-term reliability

Application

Home Decor
Fashion Accessories
Outdoor Gear

Specifications

Source Content uid	FDT86113LZ	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	42 Weeks
Additional Feature	LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	3.3 A	Drain-source On Resistance-Max	0.1 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	5 pF
JESD-30 Code	R-PDSO-G4	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	2.2 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON