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Digital FET, P-Channel -25V, -0.12A, 10Ω
SOT-23Manufacturer:
Mfr.Part #:
FDV302P
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
P-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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Featuring a very high cell density process, the FDV302P delivers exceptional performance in low voltage applications. With its proprietary DMOS technology, this P-Channel logic level enhancement mode field effect transistor offers minimal on-state resistance, making it a highly efficient solution for digital transistor replacement. Unlike traditional digital transistors, the FDV302P does not require bias resistors, simplifying the design and resulting in a more streamlined and cost-effective solution for electronic circuits
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 25 V |
Id - Continuous Drain Current | 120 mA | Rds On - Drain-Source Resistance | 13 Ohms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Qg - Gate Charge | 310 pC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 350 mW |
Channel Mode | Enhancement | Series | FDV302P |
Configuration | Single | Fall Time | 8 ns |
Forward Transconductance - Min | 0.135 S | Height | 1.2 mm |
Length | 2.9 mm | Product | MOSFET Small Signal |
Product Type | MOSFET | Rise Time | 8 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 9 ns | Typical Turn-On Delay Time | 5 ns |
Width | 1.3 mm | Part # Aliases | FDV302P_NL |
Unit Weight | 0.000282 oz |
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Qty. | Unit Price | Ext. Price |
---|---|---|
10+ | $0.035 | $0.35 |
100+ | $0.028 | $2.80 |
300+ | $0.024 | $7.20 |
3000+ | $0.022 | $66.00 |
6000+ | $0.020 | $120.00 |
9000+ | $0.019 | $171.00 |
The prices below are for reference only.