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FF600R12KE4EBOSA1 +BOM

IGBT Module Trench Field Stop Half Bridge 1200 V 600 A Chassis Mount Module

FF600R12KE4EBOSA1 General Description

IGBT Module Trench Field Stop Half Bridge 1200 V 600 A Chassis Mount Module

Infineon Technologies Corporation Inventory

Key Features

  • T
  • vj>
  • RoHS compliant
  • 4 kV AC 1 min Insulation
  • Package with CTI > 400
  • High Creepage and Clearance Distances
  • UL/CSA Certification with UL1557 E83336
  • Existing packages with higher current capability, allows to increase inverter output power with same frame size
  • Highest power density
  • Flexibility
  • Optimal electrical performance
  • Highest reliability
Infineon Technologies Corporation Original Stock

Application

  • Motor control and drives
  • Solutions for photovoltaic energy systems
  • Uninterruptible Power Supplies (UPS)

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules Series C
IGBT Type Trench Field Stop Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 600 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 600A Current - Collector Cutoff (Max) 5 mA
Input Capacitance (Cies) @ Vce 38 nF @ 25 V Input Standard
NTC Thermistor No Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount Base Product Number FF600R12
RHoS yes PBFree yes
HalogenFree no

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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FF600R12KE4EBOSA1 Datasheet PDF

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In Stock: 5,653

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