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FFSH5065B-F085 +BOM

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 50A, 650V, D2, TO-247-2L

FFSH5065B-F085 General Description

To sum it up, the FFSH5065B-F085 stands out as a top-of-the-line RF semiconductor that combines advanced technology with practical design elements. Whether you are looking to enhance your Wi-Fi network or bolster your high-speed data transmission systems, this semiconductor is sure to exceed your expectations with its superior performance and unmatched reliability

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Key Features

  • Max Junction Temperature 175°C
  • Avalanche Rated 225 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
  • AEC-Q101 Qualified and PPAP Capable
ON Semiconductor, LLC Original Stock

Application

  • Technology
  • Innovation
  • Efficiency
ON Semiconductor, LLC Inventory

Specifications

Status Active Case Outline
MSL Temp (°C) 0 Container Type TUBE

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

More
E
E**a 05/21/2022

Everything is in place. The description corresponds.

3
A
A**n 05/17/2022

Got a month and a half in the mailbox.

3
C
C**b 10/08/2021

The goods received, everything works. Thank you.

10

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