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FLM7785-4F +BOM
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
TO59-
Manufacturer:
SUMITOMO ELECTRIC INDUSTRIES, LTD
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Mfr.Part #:
FLM7785-4F
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Datasheet:
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Part Life Cycle Code:
Obsolete
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Pin Count:
3
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ECCN Code:
EAR99
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Additional Feature:
HIGH RELIABILITY
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EDA/CAD Models:
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Availability: 7953 PCS
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FLM7785-4F General Description
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Key Features
- High Output Power: P1dB = 42.5dBm (Typ.)
- High Gain: G1dB = 7.0dB (Typ.)
- High PAE: ηadd = 29% (Typ.)
- Low IM3 =
- [email protected]
- = 31.5dBm
- Broad Band: 7.7 ~ 8.5GHz
- Impedance Matched Zin/Zout = 50Ω
- Hermetically Sealed
Specifications
Part Life Cycle Code | Obsolete | Pin Count | 3 |
Reach Compliance Code | ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | Case Connection | SOURCE |
Configuration | SINGLE | DS Breakdown Voltage-Min | 15 V |
Drain Current-Max (ID) | 1.3 A | FET Technology | JUNCTION |
Highest Frequency Band | X BAND | JESD-30 Code | R-CDFM-F2 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | DEPLETION MODE | Polarity/Channel Type | N-CHANNEL |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Form | FLAT | Terminal Position | DUAL |
Transistor Element Material | GALLIUM ARSENIDE |
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In Stock: 7,953
Minimum Order: 1
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