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FP35R12KT4BPSA1 +BOM

IGBT Module Trench Field Stop Three Phase Inverter 1200 V 25 A 210 W Chassis Mount AG-ECONO2-8

FP35R12KT4BPSA1 General Description

IGBT Module Trench Field Stop Three Phase Inverter 1200 V 25 A 210 W Chassis Mount AG-ECONO2-8

Infineon Technologies Corporation Inventory

Key Features

  • Low stray inductance module design
  • High reliability and power density
  • Copper base plate for optimized heat spread
  • Solderable pins
  • Low switching losses
  • High switching frequency
  • RoHS-compliant modules
  • Compact module concept
  • Optimized customer’s development cycle time and cost
  • Configuration flexibility
Infineon Technologies Corporation Original Stock

Application

  • Motor control and drives

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules Series EconoPIM™ 2
IGBT Type Trench Field Stop Configuration Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 25 A
Power - Max 210 W Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 35A
Current - Collector Cutoff (Max) 1 mA Input Capacitance (Cies) @ Vce 2 nF @ 25 V
Input Three Phase Bridge Rectifier NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount
Base Product Number FP35R12 RHoS yes
PBFree yes HalogenFree no
Product Category IGBT Modules Product IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 1.85 V
Continuous Collector Current at 25 C 35 A Gate-Emitter Leakage Current 100 nA
Pd - Power Dissipation 210 W Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C Product Type IGBT Modules
Factory Pack Quantity 15 Subcategory IGBTs
Part # Aliases FP35R12KT4 SP005422428

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FP35R12KT4BPSA1 Datasheet PDF

Preliminary Specification FP35R12KT4BPSA1 PDF Download

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