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FQA19N20C +BOM

MOSFET 200V N-Channel Advance Q-FET

Manufacturer:

ON Semiconductor
Mfr.Part #:

FQA19N20C
Datasheet:

FQA19N20C Datasheet (PDF)
Categories:

Transistors - FETs, MOSFETs - Single
Series:

QFET?
Packaging:

Tube
:

Through Hole
EDA/CAD Models:

Request Free CAD Models for FQA19N20C

FQA19N20C General Description

Fairchild Semiconductor's FQA19N20C MOSFET offers high performance and reliability for power management circuits. This N-channel MOSFET boasts a maximum drain-source voltage of 200 volts (V) and a continuous drain current of 19 amperes (A). With various package type options available, such as TO-220 and TO-247, this MOSFET is suitable for power supplies, motor control circuits, lighting applications, and other power management systems, thanks to its efficient switching capabilities and low on-resistance

Key Features

21.8A, 200V, RDS(on) = 0.17Ω @VGS = 10 V
Low gate charge ( typical 40.5 nC)
Low Crss ( typical 85 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

Specifications

Product Category	FETs - Single	Categories	Transistors - FETs, MOSFETs - Single
Series	QFET?	Packaging	Tube
	Through Hole	Part-Status	MOSFET (Metal Oxide)
FET-Type	10V	Technology	±30V
Drain-to-Source-Voltage-Vdss	180W (Tc)	Current-Continuous-Drain-Id-25°C	170 mOhm @ 10.9A, 10V
Drive-Voltage-Max-Rds-On-Min-Rds-On	TO-3PN	Vgs-th-Max-Id	TO-3P-3, SC-65-3