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See Technical Specifications

FQA24N50 +BOM

Power MOSFET, N-Channel, QFET®, 500 V, 24 A, 200 mΩ, TO-3P

Manufacturer:

Onsemi
Mfr.Part #:

FQA24N50
Datasheet:

FQA24N50 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FQA24N50

FQA24N50 General Description

Thanks to its advanced planar stripe design, the FQA24N50 is able to deliver exceptional efficiency and performance, making it an ideal choice for high efficiency switch mode power supplies and power factor correction systems. Additionally, its suitability for electronic lamp ballasts based on half bridge configurations further highlights its versatility and utility in various applications

Key Features

Fast startup time for quick recovery
High efficiency for minimal waste heat
Precise voltage regulation with low ripple
Economical pricing for budget-friendly options

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	500 V
Id - Continuous Drain Current	24 A	Rds On - Drain-Source Resistance	200 mOhms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	5 V
Qg - Gate Charge	90 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	290 W
Channel Mode	Enhancement	Series	FQA24N50
Configuration	Single	Fall Time	155 ns
Forward Transconductance - Min	22 S	Height	20.1 mm
Length	16.2 mm	Product Type	MOSFET
Rise Time	250 ns	Factory Pack Quantity	450
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	200 ns
Typical Turn-On Delay Time	80 ns	Width	5 mm
Part # Aliases	FQA24N50_NL	Unit Weight	0.162260 oz