This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FQD16N25CTM +BOM

Power MOSFET, N-Channel, QFET®, 250 V, 16 A, 270 mΩ, DPAK

Manufacturer:

onsemi
Mfr.Part #:

FQD16N25CTM
Datasheet:

FQD16N25CTM Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQD16N25CTM

FQD16N25CTM General Description

The FQD16N25CTM MOSFET is a high-performance component ideal for applications requiring quick and efficient switching. With a voltage rating of 250V and a continuous drain current of 16A, this N-channel MOSFET is a reliable choice for a variety of power electronics projects. Its low on-resistance of 0.19 ohms helps to reduce power losses and enhance overall efficiency in switching circuits. Moreover, the gate threshold voltage of 2.8V ensures compatibility with standard logic levels, making integration into existing systems a seamless process

Key Features

High-reliability component with minimal failure rate
Limited inrush current at startup
Fast switching times ensure efficient power transfer
Suitable for high-power industrial applications
Wide operating temperature range guaranteed

Application

Applications in LED
Consumer goods

Specifications

Source Content uid	FQD16N25CTM	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	62 Weeks
Additional Feature	AVALANCHE RATED	Avalanche Energy Rating (Eas)	432 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	250 V
Drain Current-Max (ID)	16 A	Drain-source On Resistance-Max	0.27 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	160 W
Pulsed Drain Current-Max (IDM)	64 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON