This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FQD17P06TM +BOM

Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, DPAK

Manufacturer:

onsemi
Mfr.Part #:

FQD17P06TM
Datasheet:

FQD17P06TM Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQD17P06TM

FQD17P06TM General Description

The FQD17P06TM MOSFET utilizes a proprietary planar stripe and DMOS technology to deliver reduced on-state resistance and superior switching performance. This makes it perfect for applications such as switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications. Its advanced technology and high performance make it an excellent choice for a wide range of projects

Key Features

High-temperature operation
Low-voltage startup mechanism
Fast self-recovery capability
Automatic shutdown protection

Application

Smartphone
Tablet
Laptop

Specifications

Source Content uid	FQD17P06TM	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	17 Weeks, 3 Days
Avalanche Energy Rating (Eas)	300 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	12 A	Drain-source On Resistance-Max	0.135 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	44 W
Pulsed Drain Current-Max (IDM)	48 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON