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See Technical Specifications

FQD1N80TM +BOM

N-Channel 800 V 1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA

Manufacturer:

onsemi
Mfr.Part #:

FQD1N80TM
Datasheet:

FQD1N80TM Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQD1N80TM

FQD1N80TM General Description

The FQD1N80TM is a top-of-the-line N-Channel enhancement mode power MOSFET that is designed to deliver exceptional performance in a variety of applications. Its proprietary planar stripe and DMOS technology work together to reduce on-state resistance, enhance switching performance, and provide superior avalanche energy strength. These features make the FQD1N80TM an excellent choice for applications such as switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Engineers and designers can trust the FQD1N80TM to deliver reliable and efficient power management solutions

Key Features

High-voltage handling capability (800V RMS)
Low on-resistance (Typ. 20Ω @8V, 10A)
Fast recovery time (Typ. 50ns)
Small size and low profile (1.2mm x 0.7mm)

Application

Light up the room
Set the mood
Enhance your environment

Specifications

Source Content uid	FQD1N80TM	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Avalanche Energy Rating (Eas)	90 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	800 V
Drain Current-Max (ID)	1 A	Drain-source On Resistance-Max	20 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	45 W
Pulsed Drain Current-Max (IDM)	4 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON