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FQD7P20TM +BOM

P-Channel 200 V 5.7A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA

FQD7P20TM General Description

With a focus on maximizing efficiency and performance, the FQD7P20TM stands out as a top-tier option for engineers and designers seeking a high-quality power MOSFET. Its specialized design, which incorporates a planar stripe and DMOS technology, ensures that users can achieve optimal results in their applications. Whether used in power supplies, audio amplifiers, or motor control systems, this MOSFET offers the reliability and functionality needed to drive innovation and meet the demands of modern electronic devices

Key Features

  • High-speed switching
  • Low power consumption
  • Fast response time
  • Accurate control

Application

  • Chic lighting options
  • Eco-friendly lights
  • Light up your life

Specifications

Source Content uid FQD7P20TM Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 62 Weeks
Avalanche Energy Rating (Eas) 570 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 5.7 A Drain-source On Resistance-Max 0.69 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 55 W
Pulsed Drain Current-Max (IDM) 22.8 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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