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See Technical Specifications

FQD8P10TM +BOM

P-Channel 100 V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA

Manufacturer:

onsemi
Mfr.Part #:

FQD8P10TM
Datasheet:

FQD8P10TM Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQD8P10TM

FQD8P10TM General Description

When it comes to power MOSFET technology, the FQD8P10TM stands out as a premier choice for engineers and designers seeking top-tier performance and reliability. With its proprietary planar stripe and DMOS technology, this P-Channel enhancement mode MOSFET is engineered to deliver unmatched on-state resistance reduction and superior switching performance. Its high avalanche energy strength and versatility make it an ideal solution for a wide range of applications, including switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications. Whether it's for industrial or consumer electronics, the FQD8P10TM MOSFET is the perfect choice for power management and control

Key Features

High-speed switching
Fast recovery time
Low leakage current
High surge capability
Excellent reliability
Compact package design

Application

Fitness Tracker
External Hard Drive
Monitor

Specifications

Source Content uid	FQD8P10TM	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	32 Weeks
Avalanche Energy Rating (Eas)	150 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	6.6 A	Drain-source On Resistance-Max	0.53 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	44 W
Pulsed Drain Current-Max (IDM)	26.4 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON