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See Technical Specifications

FQP20N06L +BOM

Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 21 A, 55 mΩ, TO-220

Manufacturer:

onsemi
Mfr.Part #:

FQP20N06L
Datasheet:

FQP20N06L Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQP20N06L

FQP20N06L General Description

Featuring ON Semiconductor's proprietary planar stripe and DMOS technology, the FQP20N06L is an N-Channel enhancement mode power MOSFET that is designed to minimize on-state resistance and offer superior switching performance and high avalanche energy strength. These attributes make it an excellent choice for various applications such as switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications

Key Features

21A, 60V, R_DS(on) = 55mΩ(Max.) @V_GS = 10 V, I_D = 10.5A
Low gate charge ( Typ. 9.5nC)
Low C_rss ( Typ. 35pF)
100% avalanche tested
175°C maximum junction temperature rating

Application

Dynamic Surround Sound
Wireless Connectivity
Easy Setup Process

Specifications

Source Content uid	FQP20N06L	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	31 Weeks
Avalanche Energy Rating (Eas)	170 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	21 A
Drain-source On Resistance-Max	0.07 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	53 W	Pulsed Drain Current-Max (IDM)	84 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON