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See Technical Specifications

FQP27N25 +BOM

N-Channel 250 V 25.5A (Tc) 180W (Tc) Through Hole TO-220-3

Manufacturer:

onsemi
Mfr.Part #:

FQP27N25
Datasheet:

FQP27N25 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQP27N25

FQP27N25 General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

25.5A, 250V, R_DS(on) = 110mΩ(Max.) @V_GS = 10 V, I_D = 12.75A
Low gate charge ( Typ. 50nC)
Low C_rss ( Typ. 45pF)
100% avalanche tested

Application

Other Audio & Video

Specifications

Source Content uid	FQP27N25	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	10 Weeks, 4 Days
Avalanche Energy Rating (Eas)	600 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	250 V	Drain Current-Max (ID)	25.5 A
Drain-source On Resistance-Max	0.11 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	180 W	Pulsed Drain Current-Max (IDM)	102 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON