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See Technical Specifications

FQP32N20C +BOM

Power MOSFET, N-Channel, QFET®, 200 V, 28 A, 82 mΩ, TO-220

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FQP32N20C
Datasheet:

FQP32N20C Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQP32N20C

FQP32N20C General Description

Moreover, the FQP32N20C embodies a commitment to sustainability, with its energy-efficient operation contributing to reduced power consumption and lower carbon emissions. By harnessing the latest advancements in semiconductor technology, ON Semiconductor continues to spearhead the evolution of power electronics, empowering industries and individuals alike to embrace a future of efficiency and innovation

Key Features

Up to 12V, Low Dropout
High Current, Low Rds(on)
Faster Switching, Low Qrr
Low Vgs, High Id
Rise Time: 50ns, Fall Time: 100ns
Compact Design, High Efficiency

Application

Exclusive Video Streaming Devices
Stylish Audio Equipment

Specifications

Source Content uid	FQP32N20C	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	26 Weeks
Avalanche Energy Rating (Eas)	955 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	200 V	Drain Current-Max (ID)	28 A
Drain-source On Resistance-Max	0.082 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	156 W	Pulsed Drain Current-Max (IDM)	112 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON