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See Technical Specifications

FQP3N80C +BOM

N-Channel 800 V 3A (Tc) 107W (Tc) Through Hole TO-220-3

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FQP3N80C
Datasheet:

FQP3N80C Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

800 V
Current - Continuous Drain (Id) @ 25°C:

3A (Tc)
EDA/CAD Models:

Request Free CAD Models for FQP3N80C

FQP3N80C General Description

With its use of ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology, the FQP3N80C N-Channel enhancement mode power MOSFET delivers impressive features. Its design focuses on reducing on-state resistance, providing superior switching performance, and offering high avalanche energy strength. These qualities make the FQP3N80C suitable for a range of applications, including switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts, making it a valuable asset for effective power management and control

Key Features

Faster switching speed
Higher power density
R_DS(on) = 3.5Ω( Max.) @ V_GS = 15V, I_D = 2A
No thermal shutdown

Application

Illuminate
Your
Life

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V	Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	16.5 nC @ 10 V
Vgs (Max)	±30V	Input Capacitance (Ciss) (Max) @ Vds	705 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	107W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole