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See Technical Specifications

FQP4N90C +BOM

TO-220 Three-Pin N-Channel MOSFET with 900V Voltage Rating and 4A Capacity

Manufacturer:

Onsemi
Mfr.Part #:

FQP4N90C
Datasheet:

FQP4N90C Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FQP4N90C

FQP4N90C General Description

QFET 900 V N-CHANNEL MOSFET Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Key Features

High surge capability
Low leakage current
Silicon carbide construction

Application

Brighten up your space
Illuminate with style
Add some ambiance

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	900 V
Id - Continuous Drain Current	4 A	Rds On - Drain-Source Resistance	4.2 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	22 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	140 W
Channel Mode	Enhancement	Tradename	QFET
Series	FQP4N90C	Configuration	Single
Fall Time	35 ns	Forward Transconductance - Min	5 S
Height	16.3 mm	Length	10.67 mm
Product Type	MOSFET	Rise Time	50 ns
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	40 ns	Typical Turn-On Delay Time	25 ns
Width	4.7 mm	Unit Weight	0.068784 oz

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Ratings and Reviews

N**n 06/14/2024

avaq is a reliable company!

T**e 04/15/2024

I couldn't ask for better components than the 74HCT238 ones from Avaq! They delivered exactly what they promised – top-notch quality and all brand new. Highly satisfied with my purchase!

C**n 10/20/2020

It came in 45 days the city of naberezhnye chelny