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See Technical Specifications

FQP50N06 +BOM

TO-220 MOSFETs ROHS

Manufacturer:

Onsemi
Mfr.Part #:

FQP50N06
Datasheet:

FQP50N06 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FQP50N06

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FQP50N06 General Description

When it comes to power field effect transistors, the FQP50N06 from ON Semiconductor stands out as a cutting-edge solution for a wide range of applications. Engineered using state-of-the-art DMOS technology, these transistors deliver outstanding performance by minimizing resistance, improving switching capabilities, and ensuring reliability in demanding environments. Whether you are working on a complex automotive system, a compact DC/DC converter, or a high-efficiency power management solution for portable devices, the FQP50N06 is the perfect choice to drive your project forward with confidence

Key Features

Fast recovery time
High surge current
Good thermal stability

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	50 A	Rds On - Drain-Source Resistance	22 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	31 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	120 W
Channel Mode	Enhancement	Series	FQP50N06
Configuration	Single	Fall Time	65 ns
Forward Transconductance - Min	22 S	Height	16.3 mm
Length	10.67 mm	Product Type	MOSFET
Rise Time	105 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	60 ns
Typical Turn-On Delay Time	15 ns	Width	4.7 mm
Part # Aliases	FQP50N06_NL	Unit Weight	0.068784 oz