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See Technical Specifications

FQP7N80C +BOM

Power MOSFET for N-Channel operation with a QFET® design, featuring a high voltage rating of 800 V and a current handling capacity of 7 A

Manufacturer:

Onsemi
Mfr.Part #:

FQP7N80C
Datasheet:

FQP7N80C Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for FQP7N80C

FQP7N80C General Description

Fairchild Semiconductor’s FQP7N80C MOSFET sets a new standard in power MOSFET technology, providing enhanced efficiency and performance for a wide range of applications. Its advanced features, such as reduced on-state resistance and high avalanche energy strength, make it a versatile and reliable choice for industries requiring precision and durability in their electronic components

Key Features

6.6A, 800V, R_DS(on) = 1.9Ω(Max.) @V_GS = 10 V, I_D = 3.3A
Low gate charge ( Typ. 27nC)
Low C_rss ( Typ. 10pF)
100% avalanche tested

Application

Stylish keyboard
Wireless mouse
High-speed router

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	800 V	Id - Continuous Drain Current	6.6 A
Rds On - Drain-Source Resistance	1.9 Ohms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	3 V	Qg - Gate Charge	35 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	167 W	Channel Mode	Enhancement
Tradename	QFET	Series	FQP7N80C
Configuration	Single	Fall Time	60 ns
Forward Transconductance - Min	5.5 S	Height	16.3 mm
Length	10.67 mm	Product Type	MOSFET
Rise Time	100 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	50 ns
Typical Turn-On Delay Time	35 ns	Width	4.7 mm
Part # Aliases	FQP7N80C_NL	Unit Weight	0.068784 oz