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FQP90N10V2 +BOM
FQP90N10V2: Next-Generation N-Channel MOSFET for Advanced Voltage Control
TO-220-3-
Manufacturer:
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Mfr.Part #:
FQP90N10V2
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Datasheet:
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
100 V
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Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
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EDA/CAD Models:
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Availability: 6372 PCS
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FQP90N10V2 General Description
N-Channel 100 V 90A (Tc) 250W (Tc) Through Hole TO-220-3
Key Features
- 71A, 80V, RDS(on) = 0.016Ω @VGS = 10 V
- Low gate charge ( typical 84 nC)
- Low Crss ( typical 200 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
Specifications
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 10mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 191 nC @ 10 V |
Vgs (Max) | ±30V | Input Capacitance (Ciss) (Max) @ Vds | 6150 pF @ 25 V |
FET Feature | - | Power Dissipation (Max) | 250W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
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In Stock: 6,372
Minimum Order: 1
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