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FQPF11N40C +BOM

Power Field-Effect Transistor for High Current Applications

FQPF11N40C General Description

Designed for efficiency and performance, the FQPF11N40C power MOSFET combines advanced technology with superior construction. ON Semiconductor's expertise in semiconductor solutions is evident in the design and functionality of this device, which offers low on-state resistance and high switching performance. The FQPF11N40C is a versatile component suitable for a wide range of applications, including power factor correction and lighting ballasts, where reliability and precision are essential

Key Features

  • Fast and accurate thermal shutdown protection
  • Internal fault protection circuitry included
  • Silicon-controlled rectifier with high surge current
  • High-speed switching with low gate charge
  • Pulse-by-pulse current limiting enabled
  • Low capacitance to ground for better noise immunity

Application

  • Great Value
  • Must-Have Item

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 400 V
Id - Continuous Drain Current 11 A Rds On - Drain-Source Resistance 530 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 35 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 44 W
Channel Mode Enhancement Tradename QFET
Series FQPF11N40C Configuration Single
Fall Time 81 ns Forward Transconductance - Min 7.1 S
Height 16.07 mm Length 10.36 mm
Product Type MOSFET Rise Time 89 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 81 ns Typical Turn-On Delay Time 14 ns
Width 4.9 mm Part # Aliases FQPF11N40C_NL
Unit Weight 0.068784 oz

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