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See Technical Specifications

FQPF65N06 +BOM

40 amperes, 60 volts, with a resistance of 0.016 ohms, this N-channel silicon power MOSFET is designated as FQPF65N06

Manufacturer:

ON SEMICONDUCTOR
Mfr.Part #:

FQPF65N06
Datasheet:

FQPF65N06 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQPF65N06

FQPF65N06 General Description

Designed for efficiency and performance, the FQPF65N06 is a top choice for designers seeking a power MOSFET that can meet the demands of modern electronic systems. Its optimized construction and advanced technology ensure low on-state resistance and high switching performance, making it a valuable component for a wide range of applications. From power supplies to audio amplifiers, the FQPF65N06 offers the reliability and performance needed to drive innovation and enhance the functionality of electronic devices

Key Features

High avalanche energy absorption (Typ. 20mJ)
Low thermal resistance (Typ. 0.5°C/W)
R_DS(on) = 10mΩ(Max.) @V_GS = 12 V, I_D = 25A
Suitable for high-frequency applications

Application

Transform your operation
Elevate your performance
Maximize efficiency

Specifications

Source Content uid	FQPF65N06	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	6 Weeks
Avalanche Energy Rating (Eas)	645 mJ	Case Connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (Abs) (ID)	40 A	Drain Current-Max (ID)	40 A
Drain-source On Resistance-Max	0.016 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	56 W
Pulsed Drain Current-Max (IDM)	160 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	MATTE TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON