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N-Channel 600 V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-4
SOT-223-4Manufacturer:
Mfr.Part #:
FQT1N60CTF-WS
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
EDA/CAD Models:
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The FQT1N60CTF-WS power MOSFET, designed with ON Semiconductor's proprietary planar stripe and DMOS technology, delivers exceptional performance in power management applications. With its reduced on-state resistance and superior switching performance, this MOSFET is ideal for use in switched mode power supplies, active power factor correction, and electronic lamp ballasts. Its high avalanche energy strength further enhances its suitability for demanding environments
Source Content uid | FQT1N60CTF-WS | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 600 V |
Drain Current-Max (ID) | 0.2 A | Drain-source On Resistance-Max | 11.5 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 6 pF |
JESD-30 Code | R-PDSO-G4 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 4 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | 250 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 2.1 W |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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