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See Technical Specifications

FS30R06XL4 +BOM

Robust and durable insulated gate bipolar transistor for high-reliability use case

Manufacturer:

Infineon
Mfr.Part #:

FS30R06XL4
Datasheet:

FS30R06XL4 Datasheet (PDF)
Product:

IGBT Silicon Modules
Configuration:

Hex
Collector- Emitter Voltage VCEO Max:

600 V
Continuous Collector Current At 25 C:

35 A

FS30R06XL4 General Description

The FS30R06XL4 module from Infineon Technologies is an ideal solution for high power applications, offering a 600V, 30A dual IGBT module with a focus on low loss and low switching noise. With its ultra-fast soft recovery diodes, this module delivers reduced switching losses and improved efficiency, making it an excellent choice for motor controls, power supplies, and inverters. Its compact and lightweight design is perfect for space-limited applications

Key Features

High Efficiency Operation
Wide Operating Temperature Range
Excellent Overload Capability
Suitable for DC Power Supply

Application

Efficient solar inverters
Reliable UPS systems
High-power electric motors

Specifications

Product Category	IGBT Modules	Product	IGBT Silicon Modules
Configuration	Hex	Collector- Emitter Voltage VCEO Max	600 V
Continuous Collector Current at 25 C	35 A	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 125 C	Height	17 mm
Length	45.6 mm	Maximum Gate Emitter Voltage	20 V
Mounting Style	Chassis Mount	Product Type	IGBT Modules
Factory Pack Quantity	20	Subcategory	IGBTs
Technology	Si	Width	33 mm
Part # Aliases	SP000100284 FS30R06XL4BOMA1	Unit Weight	1.640283 oz