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FS800R07A2E3 +BOM

700A I(C) N-Channel Insulated Gate Bipolar Transistor with 650V V(BR)CES in Module-33

Avaq Semiconductor offers the highly versatile and reliable FS800R07A2E3 driver, produced by Infineon Technologies Corporation. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the  FS800R07A2E3.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Source Content uid FS800R07A2E3 Pbfree Code Yes
Part Life Cycle Code Not Recommended Pin Count 33
Reach Compliance Code compliant ECCN Code EAR99
Case Connection ISOLATED Collector Current-Max (IC) 700 A
Collector-Emitter Voltage-Max 650 V Configuration 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max 20 V JESD-30 Code R-XUFM-X33
Number of Elements 6 Number of Terminals 33
Operating Temperature-Max 175 °C Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 1500 W
Qualification Status Not Qualified Surface Mount NO
Terminal Form UNSPECIFIED Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 690 ns
Turn-on Time-Nom (ton) 230 ns VCEsat-Max 1.6 V

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