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See Technical Specifications

FS950R08A6P2B +BOM

IGBT Modules HYBRID PACK DRIVE

Manufacturer:

INFINEON
Mfr.Part #:

FS950R08A6P2B
Datasheet:

FS950R08A6P2B Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Case Connection:

ISOLATED

FS950R08A6P2B General Description

Electrical Features•Blocking voltage 750V•Low VCEsat•Low Switching Losses•Low Qg and Crss•Low Inductive Design•Tvj op = 150°C•Short-time extended Operation TemperatureTvj op = 175°CMechanical Features•4.2kV DC 1sec Insulation•High Creepage and Clearance Distances•Compact design•High Power Density•Direct Cooled PinFin Base Plate•Guiding elements for PCB and cooler assembly•Integrated NTC temperature sensor•PressFIT Contact Technology•RoHS compliant•UL 94 V0 module frameDescriptionThe HybridPACKTM Drive is a very compactsix-pack module (750V/950A) optimized for hybridand electric vehicles. The power moduleimplements the new EDT2 IGBT generation, whichis an automotive Micro-Pattern Trench-Field-Stopcell design optimized for electric drive trainapplications. The chipset has benchmark currentdensity combined with short circuit ruggedness andincreased blocking voltage for reliable inverteroperation under harsh environmental conditions.The EDT2 IGBTs also show excellent light loadpower losses, which helps to improve systemefficiency over a real driving cycle. The EDT2 IGBTwas optimized for applications with switchingfrequencies in the range of 10 kHz.The new HybridPACKTM Drive power module familycomes with mechanical guiding elementssupporting easy assembly processes for customers.Furthermore, the press-fit pins for the signalterminals avoid additional time consuming selectivesolder processes, which provides cost savings onsystem level and increases system reliability. Thedirect cooled baseplate with PinFin structure andoptimized ceramic material in theFS950R08A6P2B product best utilizes theimplemented chipset and shows superior thermalcharacteristics. Due to the high clearance &creepage distances, the module family is also wellsuited for increased system working voltages andsupports modular inverter approaches.

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Case Connection	ISOLATED
Collector Current-Max (IC)	950 A	Collector-Emitter Voltage-Max	750 V
Configuration	3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	Gate-Emitter Thr Voltage-Max	6.5 V
Gate-Emitter Voltage-Max	20 V	JESD-30 Code	R-XUFM-X33
Number of Elements	6	Number of Terminals	33
Operating Temperature-Max	150 °C	Operating Temperature-Min	-40 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	870 W	Surface Mount	NO
Terminal Form	UNSPECIFIED	Terminal Position	UPPER
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	POWER CONTROL
Transistor Element Material	SILICON	Turn-off Time-Nom (toff)	1110 ns
Turn-on Time-Nom (ton)	380 ns	VCEsat-Max	1.35 V