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See Technical Specifications

FZ1800R12KF4 +BOM

High-power switching for DC/AC motor drives and power conversion application

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

FZ1800R12KF4
Datasheet:

FZ1800R12KF4 Datasheet (PDF)
Product:

IGBT Silicon Modules
Configuration:

Triple Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max:

1.2 kV
Collector-Emitter Saturation Voltage:

2.7 V
EDA/CAD Models:

Request Free CAD Models for FZ1800R12KF4

Email: [email protected]

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Tel: +852 95804164

Avaq Semiconductor offers the highly versatile and reliable FZ1800R12KF4 driver, produced by Infineon Technologies Corporation. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the FZ1800R12KF4.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Infineon Technologies Corporation Inventory

Infineon Technologies Corporation Original Stock

Specifications

Product Category:	IGBT Modules	Product:	IGBT Silicon Modules
Configuration:	Triple Common Emitter Common Gate	Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.7 V	Continuous Collector Current at 25 C:	1.8 kA
Gate-Emitter Leakage Current:	400 nA	Pd - Power Dissipation:	5 kW
Minimum Operating Temperature:	- 40 C	Maximum Operating Temperature:	+ 125 C
Height:	48 mm	Length:	190 mm
Maximum Gate Emitter Voltage:	20 V	Mounting Style:	SMD/SMT
Product Type:	IGBT Modules	Factory Pack Quantity:	1
Subcategory:	IGBTs	Technology:	Si
Width:	140 mm	Product Category	IGBT Modules
Product	IGBT Silicon Modules	Configuration	Triple Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	2.7 V
Continuous Collector Current at 25 C	1.8 kA	Gate-Emitter Leakage Current	400 nA
Pd - Power Dissipation	5 kW	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 125 C	Height	48 mm
Length	190 mm	Maximum Gate Emitter Voltage	20 V
Mounting Style	SMD/SMT	Product Type	IGBT Modules
Factory Pack Quantity	1	Subcategory	IGBTs
Technology	Si	Width	140 mm