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See Technical Specifications

G2R1000MT17D +BOM

Power Field-Effect Transistor, 4A I(D), 3300V, 1.2ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263

Manufacturer:

GeneSiC Semiconductor
Mfr.Part #:

G2R1000MT17D
Datasheet:

G2R1000MT17D Datasheet (PDF)
Series:

G2R™
FET Type:

N-Channel
Technology:

SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):

1700 V
EDA/CAD Models:

Request Free CAD Models for G2R1000MT17D

G2R1000MT17D General Description

In conclusion, the Omron G2R1000MT17D relay module is a versatile and dependable solution for controlling electrical circuits in various industrial and commercial settings. Its robust design, high-quality construction, and wide operating temperature range make it a popular choice among professionals who require reliable switching in their applications

Specifications

Series	G2R™	FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)	Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2A, 20V	Vgs(th) (Max) @ Id	5.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 20 V	Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	111 pF @ 1000 V	Power Dissipation (Max)	44W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	G2R1000