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GT10J301 +BOM

GT10J301 IGBT Transistors - Three-Phase IGBT PP2

Key Features

    Specifications

    Source Content uid GT10J301 Pbfree Code No
    Part Life Cycle Code Obsolete Pin Count 3
    Reach Compliance Code ECCN Code EAR99
    HTS Code 8541.29.00.95 Additional Feature HIGH SPEED
    Case Connection COLLECTOR Collector Current-Max (IC) 10 A
    Collector-Emitter Voltage-Max 600 V Configuration SINGLE WITH BUILT-IN DIODE
    Fall Time-Max (tf) 300 ns Gate-Emitter Thr Voltage-Max 8 V
    Gate-Emitter Voltage-Max 20 V JESD-30 Code R-PSFM-T3
    Number of Elements 1 Number of Terminals 3
    Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 240
    Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 90 W
    Power Dissipation-Max (Abs) 90 W Qualification Status Not Qualified
    Surface Mount NO Terminal Form THROUGH-HOLE
    Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
    Transistor Application POWER CONTROL Transistor Element Material SILICON
    Turn-off Time-Nom (toff) 700 ns Turn-on Time-Nom (ton) 400 ns
    VCEsat-Max 2.7 V

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