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RESET DDR DRAM, 128MX16, 0.195ns, CMOS, PBGA96
TFBGAManufacturer:
SK HYNIX INC
Mfr.Part #:
H5TQ2G63FFR-RDC
Datasheet:
Part Life Cycle Code:
Obsolete
Pin Count:
96
Reach Compliance Code:
compliant
ECCN Code:
EAR99
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The H5TQ2G43CFR-xxC, H5TQ2G83CFR-xxC are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
VDD=VDDQ=1.5V +/- 0.075V
Fully differential clock inputs (CK, CK) operation
Differential Data Strobe (DQS, DQS)
On chip DLL align DQ, DQS and DQS transition with CK
transition
DM masks write data-in at the both rising and falling
edges of the data strobe
All addresses and control inputs except data,
data strobes and data masks latched on the
rising edges of the clock
Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13
and 14 supported
Programmable additive latency 0, CL-1, and CL-2
supported
Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10
Programmable burst length 4/8 with both nibble
sequential and interleave mode
BL switch on the fly
8banks
Average Refresh Cycle (Tcase of0 oC~ 95oC)
- 7.8 s at 0oC ~ 85 oC
- 3.9 s at 85oC ~ 95 oC
JEDEC standard 78ball FBGA(x4/x8)
Driver strength selected by EMRS
Dynamic On Die Termination supported
Asynchronous RESET pin supported
ZQ calibration supported
TDQS (Termination Data Strobe) supported (x8 only)
Write Levelization supported
8 bit pre-fetch
This product in compliance with the RoHS directive.
Part Life Cycle Code | Obsolete | Pin Count | 96 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8542.32.00.36 | Access Mode | MULTI BANK PAGE BURST |
Access Time-Max | 0.195 ns | Additional Feature | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 933 MHz | I/O Type | COMMON |
Interleaved Burst Length | 4,8 | JESD-30 Code | R-PBGA-B96 |
Length | 13 mm | Memory Density | 2147483648 bit |
Memory IC Type | DDR3 DRAM | Memory Width | 16 |
Number of Functions | 1 | Number of Ports | 1 |
Number of Terminals | 96 | Number of Words | 134217728 words |
Number of Words Code | 128000000 | Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 85 °C | Operating Temperature-Min | |
Organization | 128MX16 | Output Characteristics | 3-STATE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Power Supplies | 1.5 V |
Qualification Status | Not Qualified | Refresh Cycles | 8192 |
Seated Height-Max | 1.2 mm | Self Refresh | YES |
Sequential Burst Length | 4,8 | Standby Current-Max | 0.012 A |
Supply Current-Max | 0.22 mA | Supply Voltage-Max (Vsup) | 1.575 V |
Supply Voltage-Min (Vsup) | 1.425 V | Supply Voltage-Nom (Vsup) | 1.5 V |
Surface Mount | YES | Technology | CMOS |
Temperature Grade | OTHER | Terminal Form | BALL |
Terminal Pitch | 0.8 mm | Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Width | 7.5 mm |
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