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N-Channel IGBT with low forward voltage drop for reduced energy loss
TO-247-3Manufacturer:
onsemi
Mfr.Part #:
HGTG30N60B3D_Q
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
EDA/CAD Models:
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Avaq Semiconductor offers the highly versatile and reliable HGTG30N60B3D_Q driver, produced by onsemi. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.
To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the HGTG30N60B3D_Q.
Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.45 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 60 A |
Pd - Power Dissipation | 208 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Continuous Collector Current | 60 A |
Continuous Collector Current Ic Max | 60 A | Gate-Emitter Leakage Current | +/- 250 nA |
Height | 20.82 mm | Length | 15.87 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 300 |
Subcategory | IGBTs | Width | 4.82 mm |
Unit Weight | 1.340411 oz |
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