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HMC326MS8GE +BOM
GaAs InGaP HBT Driver Amplifier SMT, 3.0 - 4.5 GHz
MSOP8-
Manufacturer:
-
Mfr.Part #:
HMC326MS8GE
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Datasheet:
-
Frequency:
3GHz ~ 4.5GHz
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P1dB:
23.5dBm
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Gain:
21dB
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Noise Figure:
5dB
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EDA/CAD Models:
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Availability: 5701 PCS
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HMC326MS8GE General Description
One of the standout features of the HMC326MS8GE is its impressive performance metrics, including a gain of 14 dB and a low noise figure of 3.5 dB at 15 GHz. With an output 1 dB compression point of +17 dBm and an input 1 dB compression point of +10 dBm, this amplifier delivers top-notch signal integrity and dynamic range
Key Features
- The HMC326MS8GE has excellent characteristics
- Suitable for various RF applications
- Wide bandwidth and low insertion loss
- Excellent isolation and P1dB compression point
- Operating frequency range: 2 – 30 GHz
Application
- Signal Processing Devices
- Telecommunication Solutions
- Integrated Circuit Design
Specifications
Category | RF and WirelessRF Amplifiers | Series | - |
Frequency | 3GHz ~ 4.5GHz | P1dB | 23.5dBm |
Gain | 21dB | Noise Figure | 5dB |
RF Type | General Purpose | Voltage - Supply | 5V |
Current - Supply | 130mA | Test Frequency | - |
Mounting Type | Surface Mount | Base Product Number | HMC326 |
Product Category | RF Amplifier | Mounting Style | SMD/SMT |
Type | Driver Amplifiers | Technology | GaAs InGaP |
Operating Frequency | 3 GHz to 4.5 GHz | P1dB - Compression Point | 23.5 dBm |
Operating Supply Voltage | 5 V | NF - Noise Figure | 5 dB |
OIP3 - Third Order Intercept | 36 dBm | Operating Supply Current | 130 mA |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 85 C |
Frequency Range | 3 GHz to 4.5 GHz | Input Return Loss | 12 dB |
Number of Channels | 1 Channel | Pd - Power Dissipation | 0.916 W |
Product Type | RF Amplifier | Factory Pack Quantity | 500 |
Subcategory | Wireless & RF Integrated Circuits | Unit Weight | 0.004938 oz |
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In Stock: 5,701
Minimum Order: 1
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It looks good, although I just tested with low voltage. I need to do further tests with high voltages, for which the diodes are designed.Thanks!