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HN58C65P-25 +BOM

OEMs, CMs ONLY (NO BROKERS)

Key Features

  • Single 5 V Supply
  • On chip latches: address, data, CE, OE, WE
  • Automatic byte write: 10 ms max
  • Automatic page write (32 byte): 10 ms max
  • Fast access time: 250 ns max
  • Low power dissipation: 20 mW/MHz typ (Active) 2.0 mW typ (Standby)
  • Data polling and Ready/Busy
  • Data protection circuity on power on/power off
  • Conforms to JEDEC byte-wide standard
  • Reliable CMOS with MNOS cell technology
  • 105 erase/write cycles (in page mode)
  • 10 year data retention

Specifications

Part Life Cycle Code Obsolete Pin Count 28
ECCN Code EAR99 HTS Code 8542.32.00.51
Access Time-Max 250 ns Additional Feature 100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; 32 BYTE PAGE WRITE; AUTOMATIC WRITE
Command User Interface NO Data Polling YES
Data Retention Time-Min 10 JESD-30 Code R-PDIP-T28
JESD-609 Code e0 Length 35.6 mm
Memory Density 65536 bit Memory IC Type EEPROM
Memory Width 8 Number of Functions 1
Number of Terminals 28 Number of Words 8192 words
Number of Words Code 8000 Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C Organization 8KX8
Page Size 32 words Parallel/Serial PARALLEL
Programming Voltage 5 V Qualification Status Not Qualified
Ready/Busy YES Seated Height-Max 5.7 mm
Standby Current-Max 0.001 A Supply Current-Max 0.025 mA
Supply Voltage-Max (Vsup) 5.5 V Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V Surface Mount NO
Technology CMOS Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm Terminal Position DUAL
Toggle Bit NO Width 15.24 mm

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In Stock: 6,058

Minimum Order: 1

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