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N-Channel Metal-oxide Semiconductor FET with a single element design made of Silicon
PQFN5X6Manufacturer:
Mfr.Part #:
IAUC120N06S5N017ATMA1
Datasheet:
Series:
OptiMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
60 V
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N-Channel 60 V 120A (Tj) 167W (Tc) Surface Mount PG-TDSON-8-43
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | OptiMOS™ |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 120A (Tj) |
Rds On (Max) @ Id, Vgs | 1.7mOhm @ 60A, 10V | Vgs(th) (Max) @ Id | 3.4V @ 94µA |
Gate Charge (Qg) (Max) @ Vgs | 95.9 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6952 pF @ 30 V | FET Feature | - |
Power Dissipation (Max) | 167W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | IAUC120 |
RHoS | yes | PBFree | yes |
HalogenFree | yes | Product Category | MOSFET |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 120 A | Rds On - Drain-Source Resistance | 1.6 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.8 V |
Qg - Gate Charge | 73.7 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 167 W |
Channel Mode | Enhancement | Fall Time | 17.2 ns |
Product Type | MOSFET | Rise Time | 7 ns |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 26.9 ns |
Typical Turn-On Delay Time | 13.4 ns | Part # Aliases | IAUC120N06S5N017 SP003244386 |
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