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IAUZ30N10S5L240ATMA1 +BOM

Transistor Power IAUZ30N10S5L240ATMA1

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IAUZ30N10S5L240ATMA1
Datasheet:

IAUZ30N10S5L240ATMA1 Datasheet (PDF)
Series:

Automotive, AEC-Q101, OptiMOS™-5
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
EDA/CAD Models:

Request Free CAD Models for IAUZ30N10S5L240ATMA1

IAUZ30N10S5L240ATMA1 General Description

The IAUZ30N10S5L240ATMA1 product offers a combination of precision engineering and advanced technology, making it an ideal choice for a wide range of applications. With its manufacturer code indicating top quality and reliability, this product is designed to meet the highest industry standards. The model number UZ30 ensures that customers can easily identify and select the specific product they need from the manufacturer's lineup. The product feature code N10 indicates that this item possesses unique specifications that set it apart from other products in its category. Additionally, the size code S5 and length specification L240 offer a clear understanding of the product's dimensions and capacity, ensuring that customers can make an informed decision about their purchase

Infineon Technologies Corporation Inventory

Key Features

OptiMOS 5 - power MOSFET for automotive applications
N-channel - Enhancement mode - Logic Level
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested

Infineon Technologies Corporation Original Stock

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	Automotive, AEC-Q101, OptiMOS™-5
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	24mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 15µA	Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	832 pF @ 50 V
FET Feature	-	Power Dissipation (Max)	45.5W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IAUZ30	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	30 A
Rds On - Drain-Source Resistance	26 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.7 V	Qg - Gate Charge	9.5 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	45.5 W	Channel Mode	Enhancement
Fall Time	3.4 ns	Product Type	MOSFET
Rise Time	1 ns	Factory Pack Quantity	5000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-On Delay Time	2 ns	Part # Aliases	IAUZ30N10S5L240 SP002143552
Unit Weight	0.003966 oz

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty

365-Day Product

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We promise to provide 365 days quality assurance service for all our products.

Ratings and Reviews

Z**y 01/05/2022

Good quality and fast delivery

T**a 12/26/2020

The complete set came for a month quality is super.

E**n 10/28/2020

Avaq goes above and beyond in terms of delivery and customer service. The ECMF02-4CMX8 components arrived swiftly, well-protected, and functioned perfectly. This distributor is a reliable choice for any electronic needs.

N**n 10/12/2020

Delivery is two and a half weeks, one capacitor is received in the kit 0,1 uf, but it's not scary, i still use others, these show the tester half of its capacity.