This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IHW40N120R3 +BOM

This product is a high-power N-channel IGBT chip meant for use in automotive electronic systems

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IHW40N120R3
Datasheet:

IHW40N120R3 Datasheet (PDF)
Feature-channel-type:

N
Feature-configuration:

Single
Feature-maximum-gate-emitter-voltage-v:

±20
Feature-maximum-collector-emitter-voltage-v:

1200
EDA/CAD Models:

Request Free CAD Models for IHW40N120R3

Avaq Semiconductor offers the highly versatile and reliable IHW40N120R3 driver, produced by Infineon Technologies Corporation. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the IHW40N120R3.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Infineon Technologies Corporation Inventory

Infineon Technologies Corporation Original Stock

Specifications

feature-technology		feature-channel-type	N
feature-configuration	Single	feature-maximum-gate-emitter-voltage-v	±20
feature-maximum-collector-emitter-voltage-v	1200	feature-maximum-continuous-collector-current-a	80
feature-maximum-power-dissipation-mw	429	feature-packaging	Tube
feature-rad-hard		feature-pin-count	3
feature-cecc-qualified		feature-esd-protection
feature-military	No	feature-aec-qualified	Yes
feature-aec-qualified-number		feature-auto-motive
feature-p-pap		feature-eccn-code	EAR99
feature-svhc	No	feature-svhc-exceeds-threshold	No
Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	1.55 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	80 A
Pd - Power Dissipation	429 W	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C	Series	RC
Gate-Emitter Leakage Current	100 nA	Product Type	IGBT Transistors
Factory Pack Quantity	240	Subcategory	IGBTs
Tradename	TRENCHSTOP	Part # Aliases	SP000999770 IHW40N120R3FKSA1
Unit Weight	0.211644 oz