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IGBT Trench 650 V 80 A 282 W Through Hole PG-TO247-3
TO-247-3Manufacturer:
Mfr.Part #:
IKW50N65WR5XKSA1
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
EDA/CAD Models:
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IGBT Trench 650 V 80 A 282 W Through Hole PG-TO247-3
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 650 V | Collector-Emitter Saturation Voltage | 1.4 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 80 A |
Pd - Power Dissipation | 282 W | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 175 C | Series | TRENCHSTOP 5 WR5 |
Gate-Emitter Leakage Current | 100 nA | Product Type | IGBT Transistors |
Factory Pack Quantity | 240 | Subcategory | IGBTs |
Tradename | TRENCHSTOP | Part # Aliases | IKW50N65WR5 SP001215522 |
Unit Weight | 0.213294 oz |
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