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High-performance gate driver IC for efficient power management, SOIC-package
SOIC NManufacturer:
Infineon
Mfr.Part #:
IR2181S
Datasheet:
Input Vcc Max:
20.0 V
Input Vcc Min:
10.0 V
Configuration:
High-side and low-side
Isolation Type:
Functional levelshift
EDA/CAD Models:
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Enhance your power electronics designs with the IR2181S Gate Driver IC, a reliable and efficient solution for driving IGBTs and MOSFETs. With its high voltage capacity, robust source and sink currents, and compact design, the IR2181S offers unmatched performance in a variety of applications. For even better functionality, consider upgrading to the 2ED2181S06F version, which incorporates advanced SOI technology for improved reliability and higher switching frequencies. Take your power electronics projects to the next level with the IR2181S series
Input Vcc max | 20.0 V | Input Vcc min | 10.0 V |
Configuration | High-side and low-side | Isolation Type | Functional levelshift |
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