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See Technical Specifications

IRF3808S +BOM

Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R

Manufacturer:

INFINEON
Mfr.Part #:

IRF3808S
Datasheet:

IRF3808S Datasheet (PDF)
Part Life Cycle Code:

Transferred
Pin Count:

3
ECCN Code:

EAR99
HTS Code:

8541.29.00.95
EDA/CAD Models:

Request Free CAD Models for IRF3808S

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Avaq Semiconductor offers the highly versatile and reliable IRF3808S driver, produced by INFINEON. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the IRF3808S.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Part Life Cycle Code	Transferred	Pin Count	3
Reach Compliance Code		ECCN Code	EAR99
HTS Code	8541.29.00.95	Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)	430 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	75 V
Drain Current-Max (ID)	75 A	Drain-source On Resistance-Max	0.007 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e0
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	225
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	200 W
Pulsed Drain Current-Max (IDM)	550 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN LEAD
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON