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See Technical Specifications

IRF9321TRPBF +BOM

P-Channel 30 V 15A (Ta) 2.5W (Ta) Surface Mount 8-SO

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRF9321TRPBF
Datasheet:

IRF9321TRPBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IRF9321TRPBF General Description

The IRF9321TRPBF is a high-performance Power MOSFET transistor that is specifically designed for high-speed switching applications in power management circuits. With its N-channel configuration and maximum voltage rating of 150 volts, this transistor is able to handle a continuous drain current of 49 amperes, making it suitable for a wide range of industrial and automotive applications

Key Features

Part number: NTO220
P-NPN power transistor
Package: TO-220AB
Vce saturation voltage: 1.5V
Ic collector current: 10A
Hfe current gain: 50
Fast switching speed
Rugged package design

Application

Consumer electronics

Specifications

Series	HEXFET®	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	15A (Ta)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.2mOhm @ 15A, 10V	Vgs(th) (Max) @ Id	2.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2590 pF @ 25 V	Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IRF9321