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See Technical Specifications

IRLU3410PBF +BOM

N-Channel 100 V 17A (Tc) 79W (Tc) Through Hole IPAK (TO-251AA)

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IRLU3410PBF
Datasheet:

IRLU3410PBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
EDA/CAD Models:

Request Free CAD Models for IRLU3410PBF

IRLU3410PBF General Description

The IRLU3410PBF is a versatile power MOSFET transistor suitable for a wide range of high-speed switching applications. With its low on-resistance of 0.075 ohms, this transistor efficiently minimizes power losses and enhances overall system efficiency. Its continuous drain current rating of 30A makes it a reliable choice for high-current applications, such as power supplies, motor control, and lighting systems

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Key Features

Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard through-hole power package
Increased ruggedness
Wide availability from distribution partners
Industry standard qualification level
High performance in low frequency applications
Standard pinout allows for drop in replacement

Infineon Technologies Corporation Original Stock

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	HEXFET®
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V	Rds On (Max) @ Id, Vgs	105mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	34 nC @ 5 V
Vgs (Max)	±16V	Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	79W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IRLU3410	RHoS	yes
PBFree	yes	HalogenFree	no