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IS43DR16640A-3DBLI +BOM

IS43DR16640A-3DBLI

Key Features

  • Clock frequency up to 400MHz
  • 8 internal banks for concurrent operation
  • 4‐bit prefetch architecture
  • Programmable CAS Latency: 3, 4, 5, 6 and 7
  • Programmable Additive Latency: 0, 1, 2, 3, 4, 5
  • and 6
  • Write Latency = Read Latency‐1
  • Programmable Burst Sequence: Sequential or
  • Interleave
  • Programmable Burst Length: 4 and 8
  • Automatic and Controlled Precharge Command
  • Power Down Mode
  • Auto Refresh and Self Refresh
  • Refresh Interval: 7.8 s (8192 cycles/64 ms)
  • OCD (Off‐Chip Driver Impedance Adjustment)
  • ODT (On‐Die Termination)
  • Weak Strength Data‐Output Driver Option

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count 84 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.32
Access Mode MULTI BANK PAGE BURST Access Time-Max 0.45 ns
Additional Feature AUTO/SELF REFRESH Clock Frequency-Max (fCLK) 333 MHz
I/O Type COMMON Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84 JESD-609 Code e1
Length 13.65 mm Memory Density 1073741824 bit
Memory IC Type DDR2 DRAM Memory Width 16
Number of Functions 1 Number of Ports 1
Number of Terminals 84 Number of Words 67108864 words
Number of Words Code 64000000 Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C Operating Temperature-Min -40 °C
Organization 64MX16 Output Characteristics 3-STATE
Peak Reflow Temperature (Cel) 260 Qualification Status Not Qualified
Refresh Cycles 8192 Seated Height-Max 1.2 mm
Self Refresh YES Sequential Burst Length 4,8
Standby Current-Max 0.015 A Supply Current-Max 0.35 mA
Supply Voltage-Max (Vsup) 1.9 V Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V Surface Mount YES
Technology CMOS Temperature Grade INDUSTRIAL
Terminal Finish TIN SILVER COPPER Terminal Form BALL
Terminal Pitch 0.8 mm Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30 Width 8 mm

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